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Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy

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6 Author(s)
Klein, P.B. ; Naval Res. Lab., Washington, DC, USA ; Mittereder, J.A. ; Binari, S.C. ; Roussos, J.A.
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Photoionisation spectroscopy has been carried out in bias-stressed AlGaN/GaN high electron mobility transistors grown by MBE in order to probe the nature of the deep trapping centres responsible for stress-induced current collapse in these devices. The results indicate that a GaN buffer layer trap previously associated with current collapse in devices grown by MOCVD is responsible for induced collapse in MBE-grown structures.

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Electronics Letters  (Volume:39 ,  Issue: 18 )