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Single and dual p-doped channel In0.52Al0.48 As/InxGa1-xAs (x=0.53, 0.65) FET's and the role of doping

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2 Author(s)
Chan, Yi-Jen ; Michigan Univ., Ann Arbor, MI, USA ; Pavlidis, D.

The properties of lattice-matched (x=0.53) and strained ( x=0.65) In0.52Al0.48As/InxGa 1-xAs p-doped channel FETs are reported. The role of doping density is studied with the help of two designs (dual-channel with low doping and single-channel with high doping). The strained dual-channel devices demonstrated an improvement of mobility from 108 cm2/V-s (53% In) to 265 cm2/V-s (65% In) at 300 K. The corresponding intrinsic transconductance enhancement is from 23 Ms/mm (53% In) to 46.5 mS/mm (65% In) using 1.0 μm-long gates. The cutoff frequency (ft) also improves from 1.0 to 1.4 GHz. The impact of strain in the highly-doped single-channel device is small. The band structure under lattice-matched and strained conditions and the position of the Fermi level according to doping seem to be the main factors determining the reported features

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 3 )

Date of Publication:

Mar 1992

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