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A 1.8 V 2 Gb NAND flash memory for mass storage applications

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13 Author(s)
June Lee ; Samsung Electron., Hwasung, South Korea ; Sung-Soo Lee ; Oh-Suk Kwon ; Kyeong-Han Lee
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A 1.8 V 2 Gb NAND flash memory is fabricated in a 90 nm process resulting in a 141 mm/sup 2/ die and a 0.044 /spl mu/m/sup 2/ effective cell. To achieve the high level of integration, critical layers are patterned with KF photolithography and phase-shift masks with proximity correction.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003