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A column-based pixel-gain-adaptive CMOS image sensor for low-light-level imaging

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8 Author(s)
Kawahito, S. ; Res. Inst. of Electron., Shizuoka Univ., Japan ; Sakakibara, M. ; Handoko, D. ; Nakamura, N.
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A 0.25 /spl mu/m technology CMOS image sensor employs a 4.2 /spl mu/m pitch pinned-photodiode pixel. A column amplifier and digital domain processing reduce the fixed pattern noise to 55 /spl mu/V. The saturation voltage is 1 V with a 2.5 V supply voltage, and the dynamic range is 69 dB.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003