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Integrated multiscale multistep process simulation

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6 Author(s)
Yeon Ho Im ; Rensselaer Polytech. Inst., Troy, NY, USA ; M. O. Bloomfield ; C. P. Sukam ; J. A. Tichy
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We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.

Published in:

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Date of Conference:

3-5 Sept. 2003