By Topic

Dopant diffusion under pressure and stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Aziz, Michael J. ; Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA

The effects of stress on equilibrium point defect populations and on dopant diffusion in strained semiconductors are reviewed. The thermodynamic relationships presented permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations of defect volumetrics for any proposed mechanism. Experiments on the effects of pressure and stress on the diffusivity of B and Sb are reviewed. The opposite effects of hydrostatic compression and of biaxial compression on the diffusivity are a consequence of the non-local nature of the point defect formation volume. Comparisons between these effects are made to determine quantitatively the anisotropy of the migration volume. The requirements to permit the prediction of the effect of an arbitrary stress state on diffusion in an arbitrary direction are discussed.

Published in:

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Date of Conference:

3-5 Sept. 2003