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Pulsed current switching of submicrometer MRAM cell

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4 Author(s)
M. Bhattacharyya ; Hewlett-Packard Labs., Palo Alto, CA, USA ; L. Tran ; J. Nickel ; T. Anthony

Thermally assisted switching of submicrometer magnetic tunnel junctions is investigated. It is found that writing can be done with pulses of the order of 1 ns. Switching current and switching current jitter are seen as strong functions of temperature, whereas both are only weakly dependent on current pulse duration. Micromagnetic modeling using a stochastic Landau-Lifschitz equation is used to understand thermal effects. The simulation predicts the observed switching current but does not explain the magnitude of the switching current jitter.

Published in:

IEEE Transactions on Magnetics  (Volume:39 ,  Issue: 5 )