By Topic

Pulsed current switching of submicrometer MRAM cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bhattacharyya, M. ; Hewlett-Packard Labs., Palo Alto, CA, USA ; Tran, L. ; Nickel, J. ; Anthony, T.

Thermally assisted switching of submicrometer magnetic tunnel junctions is investigated. It is found that writing can be done with pulses of the order of 1 ns. Switching current and switching current jitter are seen as strong functions of temperature, whereas both are only weakly dependent on current pulse duration. Micromagnetic modeling using a stochastic Landau-Lifschitz equation is used to understand thermal effects. The simulation predicts the observed switching current but does not explain the magnitude of the switching current jitter.

Published in:

Magnetics, IEEE Transactions on  (Volume:39 ,  Issue: 5 )