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InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

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6 Author(s)
Simoyama, T. ; Femtosecond Technol. Res. Assoc., Tsukuba, Japan ; Yoshida, H. ; Kasai, Jun-ichi ; Mozume, Teruo
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We report a novel intersubband transition all-optical switch with low switching energy using InGaAs-AlAs-AlAsSb coupled double quantum wells (C-DQWs) with AlAs spacer layers. Very low saturation energy density of 34 fJ//spl mu/m/sup 2/ was observed for bulk transmittance with wavelength of 1.62 /spl mu/m. Using a waveguide, whose core is 93 periods of the C-DQWs, an all optical switch with a low switching energy of 10 pJ for 10-dB extinction ratio was realized.

Published in:
Photonics Technology Letters, IEEE  (Volume:15 ,  Issue: 10 )

Date of Publication: Oct. 2003

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