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Effect of different type intermediate layers on band structure and gain of Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y/-GaAs quantum well lasers

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3 Author(s)
Wei Zhang ; Inst. of Semicond., Chinese Acad. of Sci., Beijing, China ; Ying-Qiang Xu ; Rong-Han Wu

Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of GaInNAs-GaAs quantum well lasers have been investigated. Different band-filling mechanisms have been illustrated. Compared to the GaInNAs-GaAs single quantum well with the same wavelength, the introduction of the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. However, these multilayer structures help to suppress the degradation of the differential gain.

Published in:

Photonics Technology Letters, IEEE  (Volume:15 ,  Issue: 10 )