By Topic

Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yee, M. ; Adv. Technol. Group, TECH Semicond., Singapore, Singapore ; Ng, W.K. ; David, J.P.R. ; Houston, P.A.
more authors

The avalanche multiplication and impact ionization coefficients in In0.53Ga0.47As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on InP/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in InP/In0.53Ga0.47As HBTs and could explain previous anomalous interpretations from the latter.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 10 )