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Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

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6 Author(s)
M. Yee ; Adv. Technol. Group, TECH Semicond., Singapore, Singapore ; W. K. Ng ; J. P. R. David ; P. A. Houston
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The avalanche multiplication and impact ionization coefficients in In0.53Ga0.47As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on InP/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in InP/In0.53Ga0.47As HBTs and could explain previous anomalous interpretations from the latter.

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IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 10 )