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A novel high frequency, high-efficiency, differential class-E power amplifier in 0.18 μm CMOS

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2 Author(s)
Heydari, P. ; Dept. of Electron. Eng. & Comput. Sci., California Univ., Irvine, CA, USA ; Ying Zhang

This paper presents the design of a high efficiency, low THD, 5.7 GHz fully differential power amplifier for wireless communications in a standard 0.18 μm CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. In order to achieve high operating frequency, an injection-locked oscillator is utilized, which makes the output voltage of the power amplifier tuned at the input signal frequency. A complementary CMOS cross-coupled pair topology is employed to realize the LC-tank oscillator because it has lower phase-noise, thereby giving lower THD than the single NMOS cross-coupled pair topology. The proposed power amplifier can deliver 25 dBm output power to a 50 Ω load at 5.7 GHz with 42.6% power-added efficiency (PAE) from a 1.8 V supply voltage.

Published in:

Low Power Electronics and Design, 2003. ISLPED '03. Proceedings of the 2003 International Symposium on

Date of Conference:

25-27 Aug. 2003

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