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Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors

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5 Author(s)
Blayac, S. ; R&I/Opto, Alcatel Alsthom Recherche, Marcoussis, France ; Kahn, M. ; Riet, M. ; Berdaguer, P.
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A new analytic method is presented to partition precisely the base-collector capacitance into intrinsic and extrinsic parts in bipolar transistors. It is based on base-resistance extraction measurements and requires only S-parameter measurement. This method has been successfully applied to InP/InGaAs heterojunction bipolar transistors and its accuracy has been assessed.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 17 )