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Electrical stability of the a-C:F film with low-k dielectric constant deposited by ICPCVD method

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2 Author(s)
Ko, H.J. ; Dept. of Phys., Cheju Nat. Univ., South Korea ; Choi, C.K.

Summary form only given, as follows. Electrical stability of the film for ultra-large scale integrated circuit (ULSI) multilevel interconnections is studied.

Published in:

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Date of Conference:

5-5 June 2003