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SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes

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2 Author(s)
Ming-Dou Ker ; Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Kuo-Chun Hsu

Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as an on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT-SCR) device has been confirmed to be significantly reduced by this double-triggered technique.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:3 ,  Issue: 3 )