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Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as an on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT-SCR) device has been confirmed to be significantly reduced by this double-triggered technique.
Device and Materials Reliability, IEEE Transactions on (Volume:3 , Issue: 3 )
Date of Publication: Sept. 2003