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Hot-wire CVD grown microcrystalline silicon films with and without initial growing layer modification by inductive coupled plasma

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4 Author(s)
D. Y. Kim ; Sch. of Electr. & Comput. Eng., Sung Kyun Kwan Univ., Suwon, South Korea ; S. I. Moon ; C. K. Seo ; J. S. Yi

Summary form only given, as follows. Microcrystalline Si (pc-Si) films have been deposited by using five W wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with and without modification of initial growing layer by using a inductive coupled plasma system.

Published in:

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Date of Conference:

5-5 June 2003