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This paper addresses fully integrated positive tuning differential 4.7 GHz VCO fabricated in 0.35 μm SiGe BiCMOS process with ft of 45 GHz utilizing ground shield layer structure upon low resistive silicon substrate. VCO circuit consists of a cross-coupled differential pair with a parallel resonator connected between the collector nodes and a pair of emitter-following buffer amplifiers. The VCO achieves -5.17 dBm output power with positive tuning frequency range of 509 MHz by positive voltage tuning of 3 V and exhibits -107 dBc/Hz phase noise at 1 MHz away from 4.64 GHz oscillating frequency. The oscillator draws 18 mA current from a 3V supply and occupies 0.67 mm by 0.97 mm die area.