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Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

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3 Author(s)
Appenzeller, J. ; IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA ; Knoch, J. ; Avouris, P.

We present experimental and simulation results on carbon nanotube field-effect transistors (CNFETs) and discuss their performance in the context of Schottky barriers in a strongly confined geometry. We focus in particular on the impact of the body thickness-the tube diameter-and explain why conventional output characteristics can be obtained in case of CNFETs.

Published in:

Device Research Conference, 2003

Date of Conference:

23-25 June 2003