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Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with record wide wavelength span

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5 Author(s)
Arai, M. ; Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan ; Kondo, T. ; Matsutani, A. ; Miyamoto, T.
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In this paper, we propose a growth pressure control during MOCVD growth of VCSEL wafers on a patterned substrate to avoid the mismatch between a grain peak and resonant mode. We demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 0.9-1.2 /spl mu/m, exhibiting a record wavelength span of 192 nm.

Published in:

Device Research Conference, 2003

Date of Conference:

23-25 June 2003