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Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices

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3 Author(s)
Gunther, N.G. ; Electron Devices Lab., Santa Clara Univ., CA, USA ; Mutlu, A.A. ; Rahman, M.

In this paper, we compare the 3D VQM expressions obtained for the capacitive energy of the oxide region and the depletion region with those for a device with infinitely large gate. The 3D quantum mechanical effect of the fringe field on the energy is then extracted as a correction factor to the capacitance for each region.

Published in:

Device Research Conference, 2003

Date of Conference:

23-25 June 2003