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Design of a high-density multiple-valued content-addressable memory based on floating-gate MOS devices

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2 Author(s)
T. Hanyu ; Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan ; T. Higuchi

A high-density, VLSI-oriented cellular associative memory for real-time numeric and nonnumeric computation is presented. Three kinds of basic search operations, which are parallel by word and serial by digit slice, are considered. A search word and memory words are encoded to several discrete values so that the number of digits to perform comparisons while searching can be greatly reduced. A multiple-valued down literal circuit of two variables, which is the basic building block for a compact content-addressable memory (CAM), can be implemented using a floating-gate MOS transistor whose threshold voltage is controllable by the external input signal. It is demonstrated that the number of transistors, cells, and interconnections between cells in an r-valued CAM are reduced to less than 1/log2r in comparison with the corresponding binary implementation

Published in:

Multiple-Valued Logic, 1990., Proceedings of the Twentieth International Symposium on

Date of Conference:

23-25 May 1990