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SiGe differential transimpedance amplifier with 50-GHz bandwidth

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13 Author(s)
Weiner, J.S. ; Lucent Technol., Bell Labs., Murray Hill, NJ, USA ; Leven, A. ; Houtsma, V. ; Baeyens, Y.
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InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-Ω transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA/√Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-Ω transimpedance and 49-GHz bandwidth.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 9 )

Date of Publication:

Sept. 2003

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