By Topic

SiGe differential transimpedance amplifier with 50-GHz bandwidth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
J. S. Weiner ; Lucent Technol., Bell Labs., Murray Hill, NJ, USA ; A. Leven ; V. Houtsma ; Y. Baeyens
more authors

InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-Ω transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA/√Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-Ω transimpedance and 49-GHz bandwidth.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:38 ,  Issue: 9 )