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G-band (140-220-GHz) InP-based HBT amplifiers

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8 Author(s)
M. Urteaga ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; D. Scott ; S. Krishnan ; Yun Wei
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We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one design demonstrating 12.0-dB gain at 170 GHz and a second design exhibiting 8.5-dB gain at 195 GHz.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:38 ,  Issue: 9 )