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Integration of BaTiO3ferroelectric thin films with GaAs for functional devices

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3 Author(s)
Murphy, T.E. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Ding-Yuan Chen ; Phillips, J.D.

The integration of ferroelectric oxides with GaAs could enable monolithic optoelectronic integrated circuits, advanced metal-insulator-semiconductor structures, and multifunctional optoelectronic devices. BaTiO3 is a good candidate for this integration due to the large spontaneous polarization and large electro-optic effects, but presents a challenge due to the large lattice mismatch and difficulty in achieving a crystalline oxide interface on GaAs. In this paper we investigate the deposition of BaTiO3 onto GaAs by pulsed laser deposition using varied substrate preparation techniques and MgO buffer layers. Highly oriented [001] BaTiO3 thin films are achieved exhibiting spontaneous polarization characteristic of ferroelectric material.

Published in:

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

Date of Conference:

30 June-2 July 2003

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