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The integration of ferroelectric oxides with GaAs could enable monolithic optoelectronic integrated circuits, advanced metal-insulator-semiconductor structures, and multifunctional optoelectronic devices. BaTiO3 is a good candidate for this integration due to the large spontaneous polarization and large electro-optic effects, but presents a challenge due to the large lattice mismatch and difficulty in achieving a crystalline oxide interface on GaAs. In this paper we investigate the deposition of BaTiO3 onto GaAs by pulsed laser deposition using varied substrate preparation techniques and MgO buffer layers. Highly oriented  BaTiO3 thin films are achieved exhibiting spontaneous polarization characteristic of ferroelectric material.