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Ultra low Cout×Ron photo-relay using depleted drift layer in thin film SOI

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6 Author(s)

In this paper, we propose a new concept of a MOSFET switch for small-outline photo-relays. By applying the concept of depleted drift layer to the thin film SOI MOSFET, the developed photo-relay switch has achieved the lowest Cout×Ron (product of output capacitance and on-state resistance) of 1.87 pFΩ for 26.5V device and 4 pFΩ for 43V device, respectively. These values are the lowest ever reported. The packaged photo-relays achieved low off-state leakage current and low output pin capacitance, being sufficient to be used 2-3 MHz frequency range measuring instrument.

Published in:

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Date of Conference:

14-17 April 2003