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New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter

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5 Author(s)
Matsudai, T. ; Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan ; Tsukuda, M. ; Umekawa, S. ; Tanaka, M.
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We propose 600V new thin wafer PT (Punch Through) IGBT having a new concept of anode design. This proposed PT-IGBT has a very low dose p-type layer, called p-buffer, between a transparent p-emitter (anode) and an n-buffer layer. This provides a practical design for easy fabrication without deteriorating the good feature of the thin wafer PT-IGBTs. The n-buffer dose and the p-emitter dose can be precisely controlled by the doses of the two ion implantations. This is great merit in precise control of the p-emitter injection efficiency. An oscillation in the turn-off waveforms also disappears for the proposed PT-IGBT with p-buffer layer, because a smooth turn-off is achieved by a small tail current. The total power loss is not affected by the small tail loss.

Published in:

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Date of Conference:

14-17 April 2003