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High-isolation bonding pad design for silicon RFIC up to 20 GHz

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4 Author(s)
Sang Lam ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China ; Mok, P.K.T. ; Ko, P.K. ; Chan, M.

A simple depletion-insulation (DI) bonding pad structure is presented for silicon radio frequency integrated circuits (RFIC). Experimental results show that DI bonding pads can achieve a 3 to 7 dB improvement in cross-talk isolation compared with an ordinary bonding pad at all measured frequencies. An improvement of up to 90% in the Q-factor is also achieved by the DI pad indicating a significantly reduced high-frequency substrate loss. When compared with a ground-shield (GS) bonding pad, the isolation and the Q-factor of the DI bonding pad is inferior. However, the DI pad has a 40% smaller pad capacitance compared with the GS pad. The DI structure can be used in interconnect optimization to achieve high cross-talk isolation and low substrate loss, with minimal increase in parasitic capacitance.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 9 )