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Low-leakage diode string designs using triple-well technologies for RF-ESD applications

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5 Author(s)
Shiao-Shien Chen ; Device Eng. Dept., United Microelectron. Corp., Taichung, Taiwan ; Tung-Yang Chen ; Tien-Hao Tang ; Jen-Kon Chen
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This letter proposes a novel low-leakage diode string designs using triple-well technologies in 0.18-/spl mu/m CMOS process for RF-electrostatic discharge (RF-ESD) applications. Based on the characteristics of the low-leakage current and low-capacitance in the triple-well diode string, it is convenient to apply it in RF-ESD (electrostatic discharge) protection circuit designs. As compared to the conventional p/sup +//n-well diode string, the substrate leakage current can be kept very small all the time before the triple-well diode string turns on. It results from the existence of the parasitic base-emitter tied p-n-p bipolar transistor in each triple-well diode.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 9 )

Date of Publication:

Sept. 2003

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