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A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

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4 Author(s)
Joon-Chul Goh ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea ; Jin Jang ; Kyu-Sik Cho ; Kim, Choong‐Ki

We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10000 h of operation.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 9 )