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Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

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4 Author(s)
Wong, W.S. ; Palo Alto Res. Center, CA, USA ; Ready, S.E. ; Jeng-Ping Lu ; Street, R.A.

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 × 64 pixel (300 μm pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm2/V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 9 )