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The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications

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7 Author(s)
Wen-Rong Chang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yean-Kuen Fang ; Shyh-Fann Ting ; Yong-Shiuan Tsair
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A visible-blind ultraviolet (UV) photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed on a cubic-crystalline SiCN film. The cubic-crystalline SiCN film was deposited on Si substrate with rapid thermal chemical vapor deposition (RTCVD). The optoelectron performances of the SiCN-MSM PD have been examined by the measurement of photo and dark currents and the currents' ratio under various operating temperatures. The current ratio for 254-nm UV light of the detector is about 6.5 at room temperature and 2.3 at 200/spl deg/C, respectively. The results are better than the counterpart /spl beta/-SiC of 5.4 at room temperature, and less than 2 for above 100/spl deg/C, thus offering potential applications for low-cost and high-temperature UV detection.

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Electron Device Letters, IEEE  (Volume:24 ,  Issue: 9 )