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A plasma polymerization coating process named Dielectric Resolution Enhancement Coating Technology (DiRECT) is proposed to shrink critical dimensions (CDs) of space and hole patterns. Fluorocarbon plasmas are used as the precursors to coat a polymer layer on the patterned photo-resist. By adding only one processing step, we are able to shrink poly space and contact hole to sub-90 nm-level using 248-nm lithography. The results of our extensive tests have demonstrated the production-worthiness of this technique for its consistent lot-to-lot repeatability, tight within-wafer CD uniformity, and low defect level.