By Topic

Memory characterization of SiGe quantum dot flash memories with HfO2 and SiO2 tunneling dielectrics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dong-Won Kim ; Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA ; Taehoon Kim ; S. K. Banerjee

In this study, we have developed a SiGe dot floating-gate flash memory with high-K dielectric (HfO2) tunneling oxide. Using SiGe dots and HfO2 tunneling oxide, a low program/erase voltage can be achieved, along with good endurance and charge retention characteristics as compared to the SiGe dots with a SiO2 tunneling oxide. We have also examined the impact of Ge concentration in the SiGe dots on charge retention time. This demonstrates that the SiGe dots with HfO2 tunneling oxide can be used as the floating gate to replace SiGe dots with SiO2 tunneling oxide and have a high potential for further scaling of floating gate memory devices.

Published in:

IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 9 )