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In this study, we have developed a SiGe dot floating-gate flash memory with high-K dielectric (HfO2) tunneling oxide. Using SiGe dots and HfO2 tunneling oxide, a low program/erase voltage can be achieved, along with good endurance and charge retention characteristics as compared to the SiGe dots with a SiO2 tunneling oxide. We have also examined the impact of Ge concentration in the SiGe dots on charge retention time. This demonstrates that the SiGe dots with HfO2 tunneling oxide can be used as the floating gate to replace SiGe dots with SiO2 tunneling oxide and have a high potential for further scaling of floating gate memory devices.