Photoluminescence of GeSi/Si (001) self-assembled islands with dome and hut shape

In this paper, we study the growth and photoluminescence (PL) spectra of GeSi/Si (001) self-assembled islands grown in a wide range (T/sub g/=460/spl deg/C+700/spl deg/C) of Ge deposition temperatures. A structures with Ge hut islands with a height of <1 nm and a surface density of >2.0/spl middot/10/sup 11/ cm/sup 2/ were grown. The blue-shift of the island related photoluminescence peak was observed during the island shape transition from dome to hut at T/sub g/=580/spl deg/C. The position of the island PL peak for structures grown at Tg/spl les/ 550/spl deg/C is slightly red-shifted with a decrease of T/sub g/. This shift is associated with suppression of changes in the composition and height of islands with a lowering growth temperature of the Si cap layer.