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Photoluminescence of GeSi/Si (001) self-assembled islands with dome and hut shape

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6 Author(s)
Shaleev, M.V. ; Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia ; Krasilnik, Z.F. ; Lobanov, D.N. ; Novikov, A.V.
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In this paper, we study the growth and photoluminescence (PL) spectra of GeSi/Si (001) self-assembled islands grown in a wide range (Tg=460°C+700°C) of Ge deposition temperatures. A structures with Ge hut islands with a height of <1 nm and a surface density of >2.0·1011 cm2 were grown. The blue-shift of the island related photoluminescence peak was observed during the island shape transition from dome to hut at Tg=580°C. The position of the island PL peak for structures grown at Tg≤ 550°C is slightly red-shifted with a decrease of Tg. This shift is associated with suppression of changes in the composition and height of islands with a lowering growth temperature of the Si cap layer.

Published in:

Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on

Date of Conference:

1-4 July 2003

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