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A W-band, high-gain, low-noise amplifier using PHEMT MMIC

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6 Author(s)
T. N. Ton ; TWR Electron. & Technol. Div., Redondo Beach, CA, USA ; B. Allen ; H. Wang ; G. S. Dow
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A W-band, high-gain, low-noise amplifier based on pseudomorphic InGaAs-GaAs HEMT devices has been developed. The amplifier has a measured 50-dB stable gain, and 6-dB noise figure from 91 to 95 GHz. The overall amplifier measured 1.068 in*1.281 in*0.72 in and consumes a total DC power of 560 mW. These results demonstrate the highest gain ever achieved at these frequencies.<>

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:2 ,  Issue: 2 )