Comprehensive experimental results on the coupling effects between two on-chip symmetric and asymmetric neighboring inductors on GaAs substrates are presented. These pairs of inductors are fabricated with the same track width, turn number, and spacing. Based on the S parameters measured using the de-embedding technique, we show the effects of edge distance between these two neighboring inductors on the return and transfer losses, and on self-resonance frequency. Certain ways to reduce the transfer loss are explored.
Published in:
Electromagnetic Compatibility, IEEE Transactions on
(Volume:45
,
Issue:
3
)
Date of Publication: Aug. 2003