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Comprehensive experimental results on the coupling effects between two on-chip symmetric and asymmetric neighboring inductors on GaAs substrates are presented. These pairs of inductors are fabricated with the same track width, turn number, and spacing. Based on the S parameters measured using the de-embedding technique, we show the effects of edge distance between these two neighboring inductors on the return and transfer losses, and on self-resonance frequency. Certain ways to reduce the transfer loss are explored.