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A new structure of carbon nanotube field emission display has been studied. To shrink the range of the modulate voltage applied on the gate electrode, which is placed in the CNT/spl I.bar/FED, we have designed and fabricated one double gates structure. In the new structure, the one below, which is near to the CNT cathode, is made of metal mesh with MgO or MgF/sub 2/ layer, and the primary electrons that come from the cathode can excite the secondary electrons from the dielectric layer. The gate above the first one acts as the real modulate electrode in the new structure that can control the electrons, most of which are the secondary electrons. Because of the low energy of the secondary electrons, the range of the modulate voltage can be withdrawn. In order to find the best result, as to the modulate electrode made of metal mesh, we have the metal mesh covered with MgF/sub 2/ layer or not. The comparisons are shown in the paper. The simulation and the experiment data, which are given in the paper show we have got an effective method to reduce the expense of the driver circuit of the CNT/spl I.bar/FED.