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High performance quantum dot lasers on GaAs substrates operating in 1.5 μm range

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12 Author(s)
Ledentsov, N.N. ; Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany ; Kovsh, A.R. ; Zhukov, A.E. ; Maleev, N.A.
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Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (ηi>60%) and low internal losses (α<3-4 cm-1) are realised. The transparency current density per single QD layer is estimated as ∼70 A/cm2 and the characteristic temperature is 60 K (20-85°C). The emission wavelength exceeds 1.51 μm at temperatures above 60°C.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 15 )