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Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

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7 Author(s)

The pixel detector in the BTeV experiment at the Tevatron (Fermilab) provides high-resolution tracking and vertex identification. For this task, the hybrid pixel detector has to work in a very harsh radiation environment with 1014 minimum ionizing particles/cm2/year. Radiation hardness of prototype n+/n/p+ silicon pixel sensors has been investigated. We present electrical characterization curves for irradiated prototype n+/n/p+ sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6×1014 protons/cm2.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 4 )

Date of Publication:

Aug. 2003

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