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Dynamic and low-frequency noise characterization of Si-Ge heterojunction-bipolar transistors at cryogenic temperatures

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3 Author(s)
Arnaboldi, C. ; Dipt. di Fisica, Univ. di Milano Bicocca, Italy ; Boella, G. ; Pessina, G.

We present the characterization of the static and low-frequency noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The low injection region of operation was considered in view of their possible applications for the readout of array of cryogenic detectors.

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Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 4 )