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A novel cell technology using N-doped GeSbTe films for phase change RAM

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12 Author(s)
Horii, H. ; Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea ; Yi, J.H. ; Park, J.H. ; Ha, Y.H.
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The Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST resistivity by doping nitrogen. Doping nitrogen to GST successfully reduced writing current. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen.

Published in:

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

10-12 June 2003