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Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies

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23 Author(s)
Hwang, Y.N. ; Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea ; Hong, J.S. ; Lee, S.H. ; Ahn, S.J.
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We have fully integrated a nonvolatile random access memory by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor. As well as basic characteristics of the memory operation, we have also observed reliable performances of the device on hot temperature operation, endurance against repetitive phase transition, writing imprint, reading disturbance and data retention.

Published in:

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

10-12 June 2003