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A SiN dielectric with oxygen-enriched interface (OI-SiN) was applied as an interfacial layer of an Al/sub 2/O/sub 3/ stack. The OI-SiN interface, where the nitrogen profile is controlled and the fixed charge is suppressed, can solve critical issues for high-/spl kappa/ dielectrics; impurity penetration through conventional processes, and reduced mobility due to Coulomb scattering. Thus, the drivability with low-leakage current is ensured. We show a scaling strategy to integrate the OI-SiN/Al/sub 2/O/sub 3/ stack which is suitable for low-power applications.