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Impact of oxygen-enriched SiN interface on Al/sub 2/O/sub 3/ gate stack. An innovative solution to low-power CMOS

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12 Author(s)
Saito, S. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Shimamoto, Y. ; Tsujikawa, S. ; Hamamura, H.
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A SiN dielectric with oxygen-enriched interface (OI-SiN) was applied as an interfacial layer of an Al/sub 2/O/sub 3/ stack. The OI-SiN interface, where the nitrogen profile is controlled and the fixed charge is suppressed, can solve critical issues for high-/spl kappa/ dielectrics; impurity penetration through conventional processes, and reduced mobility due to Coulomb scattering. Thus, the drivability with low-leakage current is ensured. We show a scaling strategy to integrate the OI-SiN/Al/sub 2/O/sub 3/ stack which is suitable for low-power applications.

Published in:

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

10-12 June 2003

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