Referenced Items are not available for this document.
We demonstrate 25 nm mid-gap metal gate fully-depleted silicon on insulator (FDSOI) devices with the highest reported drive current for a single-gate PMOS device (Ion=789 μA/μm and Ioff=27 nA/μm for Vgs-Vt=1.25 V). We observe electron and hole mobility degradation for very thin channels (∼7 nm). Devices show good hot carrier and gate dielectric reliability.
Published in:
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Date of Conference: 10-12 June 2003
- Page(s):
- 131 - 132
- Print ISBN:
- 4-89114-033-X
- INSPEC Accession Number:
- 7853513
- Digital Object Identifier :
- 10.1109/VLSIT.2003.1221120
- Product Type:
- Conference Publications
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