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We demonstrate 25 nm mid-gap metal gate fully-depleted silicon on insulator (FDSOI) devices with the highest reported drive current for a single-gate PMOS device (Ion=789 μA/μm and Ioff=27 nA/μm for Vgs-Vt=1.25 V). We observe electron and hole mobility degradation for very thin channels (∼7 nm). Devices show good hot carrier and gate dielectric reliability.
Date of Conference: 10-12 June 2003