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A robust low-k material (k<2.3)/Cu multilevel interconnects are integrated using optimized 300 mm-wafer processes for 65 nm node and beyond. Hybrid-structure low-k ILD of porous MSQ (k=2.3)/fluorinated-arylene (F.A., k=2.2) films reduces the effective k value (keff) to 2.6 and sh6ws good electrical characteristics. Improved mechanical properties of low-k materials (Modulus ∼10 GPa) greatly increase a process compatibility with 300 mm-wafer manufacturing technology such as low pressure CMP and plasma treatments during low-k integration.
Date of Conference: 10-12 June 2003