Referenced Items are not available for this document.
A robust low-k material (k<2.3)/Cu multilevel interconnects are integrated using optimized 300 mm-wafer processes for 65 nm node and beyond. Hybrid-structure low-k ILD of porous MSQ (k=2.3)/fluorinated-arylene (F.A., k=2.2) films reduces the effective k value (keff) to 2.6 and sh6ws good electrical characteristics. Improved mechanical properties of low-k materials (Modulus ∼10 GPa) greatly increase a process compatibility with 300 mm-wafer manufacturing technology such as low pressure CMP and plasma treatments during low-k integration.
Published in:
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Date of Conference: 10-12 June 2003
- Page(s):
- 125 - 126
- Print ISBN:
- 4-89114-033-X
- INSPEC Accession Number:
- 7853510
- Digital Object Identifier :
- 10.1109/VLSIT.2003.1221117
- Product Type:
- Conference Publications
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