Referenced Items are not available for this document.
Buried bit-line NAND (BiNAND) Flash is newly proposed to achieve low voltage programming/erase and facilitate multi-level storage. Due to the buried bit-line, the required high program/erase voltage for FN tunneling can be divided between word-line and bit-line and therefore minimizes the disturbance. The negative programmed threshold voltage also facilitates the operation of multi-level storage due to high array conductivity.
Published in:
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Date of Conference: 10-12 June 2003
- Page(s):
- 95 - 96
- Print ISBN:
- 4-89114-033-X
- INSPEC Accession Number:
- 7853496
- Conference Location :
- Kyoto, Japan
- Digital Object Identifier :
- 10.1109/VLSIT.2003.1221103
- Product Type:
- Conference Publications
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