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Integration of 10 Gb/sec silicon lateral trench photodetector with high-performance CMOS

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18 Author(s)
Yang, M. ; Div. of Res., IBM Semicond. Res. & Dev. Center., Yorktown Heights, NY, USA ; Schaub, J.D. ; Rogers, D.L. ; Griesemer, J.A.
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In this paper,we demonstrate the integration of optimized LTDs with 0.13μm CMOS technology. Excellent characteristics were achieved for both the photodiodes and the CMOS transistors. 10Gb/s operation was demonstrated at a supply voltage of only 1.5V.

Published in:
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference: 10-12 June 2003

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