By Topic

Novel multi-bit SONOS type flash memory using a high-k charge trapping layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Sugizaki, T. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Kobayashi, M. ; Ishidao, M. ; Minakata, H.
more authors

We demonstrated SONOS flash memory with a SiO/sub 2//High-k/SiO/sub 2/ structure based on a 2-bit/cell scheme. We evaluated three kinds of high-k dielectric films which were Si/sub 3/N/sub 4/, Al/sub 2/O/sub 3/ and HfO/sub 2/. Among these films, Al/sub 2/O/sub 3/ showed superior retention characteristics. The charge loss amount of Al/sub 2/O/sub 3/ at 150/spl deg/C is almost the same as that of Si/sub 3/N/sub 4/ at 25/spl deg/C. HfO/sub 2/ showed poor retention characteristics. In addition, we have found that each film has a different charge loss mechanism. We speculate that Si/sub 3/N/sub 4/ causes vertical charge migration, Al/sub 2/O/sub 3/ causes scarcely any leakage, and HfO/sub 2/ causes lateral charge migration. As a consequence, Al/sub 2/O/sub 3/ is very suitable for a charge trapping layer in multi-bit SONOS memory.

Published in:

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

10-12 June 2003