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ESD investigation of pn junction diodes in silicon-germanium heterojunction bipolar transistor

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3 Author(s)
C. H. Chou ; Div. of Teacher Educ., Providence Univ., Taichung Hsien, Taiwan ; S. S. Chen ; T. H. Tang

The electrostatic discharge (ESD) characteristics of the pn junction diodes with different configurations in a silicon-germanium heterojunction bipolar transistor (SiGe HBT) based on a 0.18 μm SiGe BiCMOS process is investigated. From the measured results, for the thin-base SiGe HBT, the base-collector junction diode shows the best ESD performance among all kinds of diode configurations owing to its large junction area.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 14 )